From 33906d2347e6cd32a7dd4cda1f7bd27b2d660241 Mon Sep 17 00:00:00 2001 From: Martin Roth Date: Wed, 7 Jun 2017 12:09:41 -0600 Subject: [PATCH] util/blobtool: add spec files for DDR3 SPDs Because of how blobtool works, we need different files for the 128 and 256 byte versions. Change-Id: I9a3a532515eaeeb65ae05ce4f7a37c88500c6193 Signed-off-by: Martin Roth Reviewed-on: https://review.coreboot.org/20094 Tested-by: build bot (Jenkins) Reviewed-by: Arthur Heymans --- util/blobtool/ddr3_unregistered_spd_128.spec | 226 +++++++++++++++++ util/blobtool/ddr3_unregistered_spd_256.spec | 241 +++++++++++++++++++ 2 files changed, 467 insertions(+) create mode 100644 util/blobtool/ddr3_unregistered_spd_128.spec create mode 100644 util/blobtool/ddr3_unregistered_spd_256.spec diff --git a/util/blobtool/ddr3_unregistered_spd_128.spec b/util/blobtool/ddr3_unregistered_spd_128.spec new file mode 100644 index 0000000000..3bf027af80 --- /dev/null +++ b/util/blobtool/ddr3_unregistered_spd_128.spec @@ -0,0 +1,226 @@ +# Applies to unbuffered DIMM types +# UDIMM, SO-DIMM, Micro-DIMM, Micro-UDIMM, +# 72b-SO-UDIMM, 16b-SO-UDIMM, 32b-SO-UDIMM + + +# 4_01_02_11R24.pdf +# +# JEDEC Standard No. 21-C +# Page 4.1.2.11 - 1 +# Annex K: Serial Presence Detect (SPD) for DDR3 SDRAM Modules +# DDR3 SPD +# Document Release 6 +# UDIMM Revision 1.3 +# RDIMM Revision 1.3 +# CDIMM Revision 1.3 +# LRDIMM Revision 1.2 + +{ + # Byte 0: Number of Bytes Used / Number of Bytes in SPD Device / + # CRC Coverage + "SPD_Bytes_Used" : 4, + "SPD_Bytes_Total" : 3, + "CRC_Coverage" : 1, + + # Byte 1: SPD Revision + "SPD_Revision" : 8, + + # Byte 2: Key Byte / DRAM Device Type + "DRAM_Device_Type" : 8, + + # Byte 3: Key Byte / Module Type + "Module_Type" : 4, + "Byte_3_reserved" : 4, + + # Byte 4: SDRAM Density and Banks + "SDRAM_Capacity" : 4, + "Bank_Address_Bits" : 3, + "Byte_4_reserved" : 1, + + # Byte 5: SDRAM Addressing + "Column_Address_Bits" : 3, + "Row_Address_Bits" : 3, + "Byte_5_reserved" : 2, + + # Byte 6: Module Nominal Voltage, VDD + "NOT_1.5_V_Operable" : 1, + "1.35_V_Operable" : 1, + "1.25_V_Operable" : 1, + "Byte_6_reserved" : 5, + + # Byte 7: Module Organization + "SDRAM_Device_Width" : 3, + "Number_of_Ranks" : 3, + "Byte_7_reserved" : 2, + + # Byte 8: Module Memory Bus Width + "Primary_Bus_Width" : 3, + "Bus_Width_Extension" : 3, + "Byte_8_reserved" : 2, + + # Byte 9: Fine Timebase (FTB) Dividend / Divisor + "Fine_Timebase_Divisor" : 4, + "Fine_Timebase_Dividend" : 4, + + # Bytes 10 / 11: Medium Timebase (MTB) Dividend / Divisor + "Medium_Timebase_Dividend" : 8, + "Medium_Timebase_Divisor" : 8, + + # Byte 12: SDRAM Minimum Cycle Time (t CK min) + "Minimum_SDRAM_Cycle_Time" : 8, + + # Byte 13: Reserved + "Byte_13_Reserved" : 8, + + # Bytes 14 / 15: CAS Latencies Supported + "CL_4_Supported" : 1, + "CL_5_Supported" : 1, + "CL_6_Supported" : 1, + "CL_7_Supported" : 1, + "CL_8_Supported" : 1, + "CL_9_Supported" : 1, + "CL_10_Supported" : 1, + "CL_11_Supported" : 1, + + "CL_12_Supported" : 1, + "CL_13_Supported" : 1, + "CL_14_Supported" : 1, + "CL_15_Supported" : 1, + "CL_16_Supported" : 1, + "CL_17_Supported" : 1, + "CL_18_Supported" : 1, + "Byte_15_Reserved" : 1, + + # Byte 16: Minimum CAS Latency Time (tAAmin) + "tAAmin" : 8, + + # Byte 17: Minimum Write Recovery Time (tWRmin) + "tWRmin" : 8, + + # Byte 18: Minimum RAS to CAS Delay Time (tRCDmin) + "tRCDmin" : 8, + + # Byte 19: Minimum Row Active to Row Active Delay Time (tRRDmin) + "tRRDmin" : 8, + + # Byte 20: Minimum Row Precharge Delay Time (tRPmin) + "tRPmin" : 8, + + # Bytes 21 - 23: Minimum Active to Precharge Delay Time (tRASmin) + # / Minimum Active to Active/Refresh Delay Time + # (tRCmin) + "tRASmin_Most_Significant Nibble" : 4, + "tRCmin_Most_Significant Nibble" : 4, + "tRASmin_LSB" : 8, + "tRCmin_LSB" : 8, + + # Bytes 24 - 25: Minimum Refresh Recovery Delay Time (tRFCmin) + "tRFCmin LSB" : 8, + "tRFCmin MSB" : 8, + + # Byte 26: Minimum Internal Write to Read Command Delay Time + "tWTRmin" : 8, + + # Byte 27: Minimum Internal Read to Precharge Command Delay Time + # (tRTPmin) + "tRTPmin" : 8, + + # Byte 28 - 29: Minimum Four Activate Window Delay Time + # (tFAWmin) + "tFAWmin Most Significant Nibble" : 4, + "Byte_28_Reserved" : 4, + "tFAWmin Most Significant Byte" : 8, + + # Byte 30: SDRAM Optional Features + "RQZ_Div_6_Supported" : 1, + "RQZ_Div_7_Supported" : 1, + "Byte_30_Reserved" : 5, + "DLL_Off_Mode_Supported" : 1, + + # Byte 31: SDRAM Thermal and Refresh + # Options + "Extended_Temp_range_supported" : 1, + "Extended_Temp_Refresh_1x_Refresh" : 1, + "Auto_Self_Refresh_Supported" : 1, + "On-Die_Thermal_Sensor" : 1, + "Byte_31_Reserved" : 3, + "Partial_Array_Self_Refresh_Supported" : 1, + + # Byte 32: Module Thermal Sensor + "Thermal_Sensor_Accuracy" : 7, + "Thermal_Sensor_incorporated" : 1, + + # Byte 33: SDRAM Device Type + "Signal_Loading" : 2, + "Byte_33_Reserved" : 2, + "Die_Count" : 3, + "SDRAM_Device_Type" : 1, + + # Byte 34: Fine Offset for SDRAM Minimum + # Cycle Time (tCKmin) + "tCKmin_Fine_Offset" : 8, + + #Byte 35: Fine Offset for Minimum CAS Latency Time (tAAmin) + "tAAmin_Fine_Offset" : 8, + + # Byte 36: Fine Offset for Minimum RAS to CAS Delay Time + # (tRCDmin) + "tRCDmin_Fine_Offset" : 8, + + #Byte 37: Fine Offset for Minimum Row Precharge Delay Time + # (tRPmin) + "tRPmin_Fine_Offset" : 8, + + # Byte 38: Fine Offset for Minimum Active to Active/Refresh + # Delay Time (tRCmin) + "tRCmin_Fine_Offset" : 8, + + # Bytes 39 / 40: Reserved + "Byte_39_Reserved" : 8, + "Byte_40_Reserved" : 8, + + # Byte 41: SDRAM Maximum Active Count (MAC) Value + "Maximum_Activate_Count" : 4, + "Maximum_Activate_Window" : 2, + "Byte_41_Reserved" : 2, + + # Bytes 42 - 59: Reserved + "Reserved_bytes_42_to_59_" [18] : 8, + +# Module-Specific Section: Bytes 60 - 116 for Unbuffered DIMMS + + # Byte 60 (Unbuffered): Raw Card Extension, Module Nominal Height + "Module_Nominal_Height" : 5, + "Raw_Card_Estension" : 3, + + # Byte 61 (Unbuffered): Module Maximum Thickness + "Module_Thickness_Front" : 4, + "Module_Thickness_Back" : 4, + + # Byte 62 (Unbuffered): Reference Raw Card Used + "Reference_Raw_Card" : 5, + "Reference_Raw_Card_Revision" : 2, + "Reference_Raw_Card_Extension" : 1, + + # Byte 63: Address Mapping from Edge Connector to DRAM + "Rank_1_Mapping_Mirrored" : 1, + "Byte_63_Reserved" : 7, + + # Bytes 64 -116 (Unbuffered): Reserved + "Module_Specific_Byte_Reserved_"[53] : 8, + + # Bytes 117 - 118: Module ID: Module Manufacturers JEDEC ID Code + "Module_Manufacturer_JEDEC_ID_Code" : 16, + + # Byte 119: Module ID: Module Manufacturing Location + "Module_Manufacturing_Location" : 8, + + # Bytes 120 - 121: Module ID: Module Manufacturing Date + "Module_Manufacturing_Date" : 16, + + # Bytes 122 - 125: Module ID: Module Serial Number + "Module_Serial_Number" : 32, + + # Bytes 126 - 127: Cyclical Redundancy Code + "Module_CRC" : 16 +} diff --git a/util/blobtool/ddr3_unregistered_spd_256.spec b/util/blobtool/ddr3_unregistered_spd_256.spec new file mode 100644 index 0000000000..d9cf51e857 --- /dev/null +++ b/util/blobtool/ddr3_unregistered_spd_256.spec @@ -0,0 +1,241 @@ +# Applies to unbuffered DIMM types +# UDIMM, SO-DIMM, Micro-DIMM, Micro-UDIMM, +# 72b-SO-UDIMM, 16b-SO-UDIMM, 32b-SO-UDIMM + + +# 4_01_02_11R24.pdf +# +# JEDEC Standard No. 21-C +# Page 4.1.2.11 - 1 +# Annex K: Serial Presence Detect (SPD) for DDR3 SDRAM Modules +# DDR3 SPD +# Document Release 6 +# UDIMM Revision 1.3 +# RDIMM Revision 1.3 +# CDIMM Revision 1.3 +# LRDIMM Revision 1.2 + +{ + # Byte 0: Number of Bytes Used / Number of Bytes in SPD Device / + # CRC Coverage + "SPD_Bytes_Used" : 4, + "SPD_Bytes_Total" : 3, + "CRC_Coverage" : 1, + + # Byte 1: SPD Revision + "SPD_Revision" : 8, + + # Byte 2: Key Byte / DRAM Device Type + "DRAM_Device_Type" : 8, + + # Byte 3: Key Byte / Module Type + "Module_Type" : 4, + "Byte_3_reserved" : 4, + + # Byte 4: SDRAM Density and Banks + "SDRAM_Capacity" : 4, + "Bank_Address_Bits" : 3, + "Byte_4_reserved" : 1, + + # Byte 5: SDRAM Addressing + "Column_Address_Bits" : 3, + "Row_Address_Bits" : 3, + "Byte_5_reserved" : 2, + + # Byte 6: Module Nominal Voltage, VDD + "NOT_1.5_V_Operable" : 1, + "1.35_V_Operable" : 1, + "1.25_V_Operable" : 1, + "Byte_6_reserved" : 5, + + # Byte 7: Module Organization + "SDRAM_Device_Width" : 3, + "Number_of_Ranks" : 3, + "Byte_7_reserved" : 2, + + # Byte 8: Module Memory Bus Width + "Primary_Bus_Width" : 3, + "Bus_Width_Extension" : 3, + "Byte_8_reserved" : 2, + + # Byte 9: Fine Timebase (FTB) Dividend / Divisor + "Fine_Timebase_Divisor" : 4, + "Fine_Timebase_Dividend" : 4, + + # Bytes 10 / 11: Medium Timebase (MTB) Dividend / Divisor + "Medium_Timebase_Dividend" : 8, + "Medium_Timebase_Divisor" : 8, + + # Byte 12: SDRAM Minimum Cycle Time (t CK min) + "Minimum_SDRAM_Cycle_Time" : 8, + + # Byte 13: Reserved + "Byte_13_Reserved" : 8, + + # Bytes 14 / 15: CAS Latencies Supported + "CL_4_Supported" : 1, + "CL_5_Supported" : 1, + "CL_6_Supported" : 1, + "CL_7_Supported" : 1, + "CL_8_Supported" : 1, + "CL_9_Supported" : 1, + "CL_10_Supported" : 1, + "CL_11_Supported" : 1, + + "CL_12_Supported" : 1, + "CL_13_Supported" : 1, + "CL_14_Supported" : 1, + "CL_15_Supported" : 1, + "CL_16_Supported" : 1, + "CL_17_Supported" : 1, + "CL_18_Supported" : 1, + "Byte_15_Reserved" : 1, + + # Byte 16: Minimum CAS Latency Time (tAAmin) + "tAAmin" : 8, + + # Byte 17: Minimum Write Recovery Time (tWRmin) + "tWRmin" : 8, + + # Byte 18: Minimum RAS to CAS Delay Time (tRCDmin) + "tRCDmin" : 8, + + # Byte 19: Minimum Row Active to Row Active Delay Time (tRRDmin) + "tRRDmin" : 8, + + # Byte 20: Minimum Row Precharge Delay Time (tRPmin) + "tRPmin" : 8, + + # Bytes 21 - 23: Minimum Active to Precharge Delay Time (tRASmin) + # / Minimum Active to Active/Refresh Delay Time + # (tRCmin) + "tRASmin_Most_Significant Nibble" : 4, + "tRCmin_Most_Significant Nibble" : 4, + "tRASmin_LSB" : 8, + "tRCmin_LSB" : 8, + + # Bytes 24 - 25: Minimum Refresh Recovery Delay Time (tRFCmin) + "tRFCmin LSB" : 8, + "tRFCmin MSB" : 8, + + # Byte 26: Minimum Internal Write to Read Command Delay Time + "tWTRmin" : 8, + + # Byte 27: Minimum Internal Read to Precharge Command Delay Time + # (tRTPmin) + "tRTPmin" : 8, + + # Byte 28 - 29: Minimum Four Activate Window Delay Time + # (tFAWmin) + "tFAWmin Most Significant Nibble" : 4, + "Byte_28_Reserved" : 4, + "tFAWmin Most Significant Byte" : 8, + + # Byte 30: SDRAM Optional Features + "RQZ_Div_6_Supported" : 1, + "RQZ_Div_7_Supported" : 1, + "Byte_30_Reserved" : 5, + "DLL_Off_Mode_Supported" : 1, + + # Byte 31: SDRAM Thermal and Refresh + # Options + "Extended_Temp_range_supported" : 1, + "Extended_Temp_Refresh_1x_Refresh" : 1, + "Auto_Self_Refresh_Supported" : 1, + "On-Die_Thermal_Sensor" : 1, + "Byte_31_Reserved" : 3, + "Partial_Array_Self_Refresh_Supported" : 1, + + # Byte 32: Module Thermal Sensor + "Thermal_Sensor_Accuracy" : 7, + "Thermal_Sensor_incorporated" : 1, + + # Byte 33: SDRAM Device Type + "Signal_Loading" : 2, + "Byte_33_Reserved" : 2, + "Die_Count" : 3, + "SDRAM_Device_Type" : 1, + + # Byte 34: Fine Offset for SDRAM Minimum + # Cycle Time (tCKmin) + "tCKmin_Fine_Offset" : 8, + + #Byte 35: Fine Offset for Minimum CAS Latency Time (tAAmin) + "tAAmin_Fine_Offset" : 8, + + # Byte 36: Fine Offset for Minimum RAS to CAS Delay Time + # (tRCDmin) + "tRCDmin_Fine_Offset" : 8, + + #Byte 37: Fine Offset for Minimum Row Precharge Delay Time + # (tRPmin) + "tRPmin_Fine_Offset" : 8, + + # Byte 38: Fine Offset for Minimum Active to Active/Refresh + # Delay Time (tRCmin) + "tRCmin_Fine_Offset" : 8, + + # Bytes 39 / 40: Reserved + "Byte_39_Reserved" : 8, + "Byte_40_Reserved" : 8, + + # Byte 41: SDRAM Maximum Active Count (MAC) Value + "Maximum_Activate_Count" : 4, + "Maximum_Activate_Window" : 2, + "Byte_41_Reserved" : 2, + + # Bytes 42 - 59: Reserved + "Reserved_bytes_42_to_59_" [18] : 8, + +# Module-Specific Section: Bytes 60 - 116 for Unbuffered DIMMS + + # Byte 60 (Unbuffered): Raw Card Extension, Module Nominal Height + "Module_Nominal_Height" : 5, + "Raw_Card_Estension" : 3, + + # Byte 61 (Unbuffered): Module Maximum Thickness + "Module_Thickness_Front" : 4, + "Module_Thickness_Back" : 4, + + # Byte 62 (Unbuffered): Reference Raw Card Used + "Reference_Raw_Card" : 5, + "Reference_Raw_Card_Revision" : 2, + "Reference_Raw_Card_Extension" : 1, + + # Byte 63: Address Mapping from Edge Connector to DRAM + "Rank_1_Mapping_Mirrored" : 1, + "Byte_63_Reserved" : 7, + + # Bytes 64 -116 (Unbuffered): Reserved + "Module_Specific_Byte_Reserved_"[53] : 8, + + # Bytes 117 - 118: Module ID: Module Manufacturers JEDEC ID Code + "Module_Manufacturer_JEDEC_ID_Code" : 16, + + # Byte 119: Module ID: Module Manufacturing Location + "Module_Manufacturing_Location" : 8, + + # Bytes 120 - 121: Module ID: Module Manufacturing Date + "Module_Manufacturing_Date" : 16, + + # Bytes 122 - 125: Module ID: Module Serial Number + "Module_Serial_Number" : 32, + + # Bytes 126 - 127: Cyclical Redundancy Code + "Module_CRC" : 16, + + # Bytes 128 - 145: Module Part Number + "Module_Part_Number"[18] : 8, + + # Bytes 146 - 147: Module Revision Code + "Module_Revision_Code" : 16, + + # Bytes 148 - 149: DRAM Manufacturers JEDEC ID Code + "DRAM_Manufacturer_JEDEC_ID_Code" : 16, + + # Bytes 150 - 175: Manufacturers Specific Data + "Manufacturer_Specific_Data_byte_" [26] : 8, + + # Bytes 176 - 255: Open for customer use + "Customer_use_byte_" [80] : 8 +}