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coreboot-kgpe-d16/src/soc/imgtec/pistachio/ddr2_init.c
Ionela Voinescu 3fa1ad0d2c pistachio: add DDR3 initialization code 
Initialization for the Winbond W631GG6KB part using Synopsys
DDR uMCTL and DDR Phy.

This code adds a separate function for DDR3 initialization
and moves all the necessary defines in a separate header file.

The programming procedure that is executed at power up to bring
up the uMCTL, PHY and memories into a state where reads and
writes to the memory can be performed is the following:

1. uPCTL (Universal DDR protocol controller) initialization
   The timining registers TOGCNT1U, TINIT, TOGCNT100N and TRSTH
   needed for driving the memory power-up sequence are programmed
   as a function of the internal timers clock frequency.
   Organization (memory chip specific) values are set
   (column/bank/row address width and number of ranks), together
   with other static values (latency, timing, power up configuration).
   All these values are static, provided by the datasheet,
   being determined by the memory type, size and frequency.
2. PHY initialization
   The PHY is programmed with datasheet provided values,
   specifying the initialization values for it to send to the
   external memory (timing parameters).
   Also, delay lines (DLL) and strength of drive pads are
   calibrated (based on external conditions: temperature,
   voltage, noise) and locked. After that, the PHY goes
   through a trainig process (also dependent on the
   current conditions at boot time) to establish precise
   timing configuration between the DDR clock and DQS (data strobe)
   and between DQS and DQ (data).
3. Memory power up
4. Switch from configuration state to access state.

It was tested on Pistachio bring up board where DDR was initialized
properly and ramstage executed correctly

Change-Id: I3bcbce2044327a22fce09b184d85ee11228a6b2b
Signed-off-by: Ionela Voinescu <ionela.voinescu@imgtec.com>
Reviewed-on: http://review.coreboot.org/10529
Tested-by: build bot (Jenkins)
Reviewed-by: Stefan Reinauer <stefan.reinauer@coreboot.org>
2015-06-12 20:19:42 +02:00

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/*
* This file is part of the coreboot project.
*
* Copyright (C) 2014 Imagination Technologies
*
* This program is free software; you can redistribute it and/or
* modify it under the terms of the GNU General Public License as
* published by the Free Software Foundation; version 2 of
* the License.
*
* This program is distributed in the hope that it will be useful,
* but WITHOUT ANY WARRANTY; without even the implied warranty of
* MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE. See the
* GNU General Public License for more details.
*
* You should have received a copy of the GNU General Public License
* along with this program; if not, write to the Free Software
* Foundation, Inc.
*/
#include <arch/io.h>
#include <soc/ddr_init.h>
#include <soc/ddr_private_reg.h>
#include <stdint.h>
#define BL8 0
/*
* Configuration for the Winbond W972GG6JB-25 part using
* Synopsys DDR uMCTL and DDR Phy
*/
int init_ddr2(void)
{
/*
* Reset the AXI bridge and DDR Controller in case any spurious
* writes have already happened to DDR - note must be done together,
* not sequentially
*/
write32(TOPLEVEL_REGS + DDR_CTRL_OFFSET, 0x00000000);
write32(TOPLEVEL_REGS + DDR_CTRL_OFFSET, 0x0000000F);
/*
* Dummy read to fence the access between the reset above
* and thw DDR controller writes below
*/
read32(TOPLEVEL_REGS + DDR_CTRL_OFFSET);
/* Timings for 400MHz
* therefore 200MHz (5ns) uMCTL (Internal) Rate
*/
/* TOGCNT1U: Toggle Counter 1U Register: 1us 200h C8h */
write32(DDR_PCTL + DDR_PCTL_TOGCNT1U_OFFSET, 0x000000C8);
/* TINIT: t_init Timing Register: at least 200us 200h C8h */
write32(DDR_PCTL + DDR_PCTL_TINIT_OFFSET, 0x000000C8);
/* TRSTH: Reset High Time Register DDR3 ONLY */
write32(DDR_PCTL + DDR_PCTL_TRSTH_OFFSET, 0x00000000);
/* TOGCNT100N: Toggle Counter 100N Register: 20d, 14h*/
write32(DDR_PCTL + DDR_PCTL_TOGG_CNTR_100NS_OFFSET, 0x00000014);
/* DTUAWDT DTU Address Width Register
* 1:0 column_addr_width Def 10 - 7 3 10 bits
* 4:3 bank_addr_width Def 3 - 2 1 3 bits (8 bank)
* 7:6 row_addr_width Def 14 - 13 1 3 bits
* 10:9 number_ranks Def 1 - 1 0 0 1 Rank
*/
write32(DDR_PCTL + DDR_PCTL_DTUAWDT_OFFSET, 0x0000004B);
/* MCFG
* 0 BL 0 = 4 1 = 8
* 1 RDRIMM 0
* 2 BL8 Burst Terminate 0
* 3 2T = 0
* 4 Multi Rank 0
* 5 DDR3 En 0
* 6 LPDDR S4 En
* 7 BST En 0, 1 for LPDDR2/3
* 15:8 Power down Idle, passed by argument
* 16 Power Down Type, passed by argument
* 17 Power Down Exit 0 = slow, 1 = fast, pba
* 19:18 tFAW 45ns = 9 clk 5*2 -1 1h
* 21:20 mDDR/LPDDR2 BL 0
* 23:22 mDDR/LPDDR2 Enable 0
* 31:24 mDDR/LPDDR2/3 Dynamic Clock Stop 0
*/
write32(DDR_PCTL + DDR_PCTL_MCFG_OFFSET,
0x00060000 | (BL8 ? 0x1 : 0x0));
/* MCFG1: Memory Configuration-1 Register
* c7:0 sr_idle Self Refresh Idle Entery 32 * nclks 14h, set 0 for BUB
* 10:8 Fine tune MCFG.19:18 -1
* 15:11 Reserved
* 23:16 Hardware Idle Period NA 0
* 30:24 Reserved
* 31 c_active_in_pin exit auto clk stop NA 0
*/
write32(DDR_PCTL + DDR_PCTL_MCFG1_OFFSET, 0x00000100);
/* DCR DRAM Config
* 2:0 SDRAM => DDR2 2
* 3 DDR 8 Bank 1
* 6:4 Primary DQ DDR3 Only 0
* 7 Multi-Purpose Register DDR3 Only 0
* 9:8 DDRTYPE LPDDR2 00
* 26:10 Reserved
* 27 NOSRA No Simultaneous Rank Access 0
* 28 DDR 2T 0
* 29 UDIMM NA 0
* 30 RDIMM NA 0
* 31 TPD LPDDR2 0
*/
write32(DDR_PHY + DDRPHY_DCR_OFFSET, 0x0000000A);
/* Generate to use with PHY and PCTL
* MR0 : MR Register, bits 12:0 imported dfrom MR
* 2:0 BL 8 011
* 3 BT Sequential 0 Interleaved 1 = 0
* 6:4 CL 6
* 7 TM Normal 0
* 8 DLL Reset 1 (self Clearing)
* 11:9 WR 15 ns 6 (101)
* 12 PD Slow 1 Fast 0 0
* 15:13 RSVD RSVD
* 31:16 Reserved
*/
write32(DDR_PHY + DDRPHY_MR_OFFSET, 0x00000A62 | (BL8 ? 0x1 : 0x0));
/* MR1 : EMR Register
* Generate to use with PHY and PCTL
* 0 DE DLL Enable 0 Disable 1
* 1 DIC Output Driver Imp Ctl 0 Full, 1 Half
* 6,2 ODT 0 Disable, 1 75R, 2 150R, 3 50R; LSB: 2, MSB: 6
* 5:3 AL = 0
* 9:7 OCD = 0
* 10 DQS 0 diff, 1 single = 0
* 11 RDQS NA 0
* 12 QOFF Normal mode 0
* 15:13 RSVD
* 31:16 Reserved
*/
write32(DDR_PHY + DDRPHY_EMR_OFFSET, 0x00000044);
/* MR2 : EMR2 Register
* Generate to use with PHY and PCTL
* 2:0 PASR, NA 000
* 3 DDC NA 0
* 6:4 RSVD
* 7 SFR 0
* 15:8 RSVD
* 31:16 Reserved
*/
write32(DDR_PHY + DDRPHY_EMR2_OFFSET, 0x00000000);
/* DSGCR
* 0 PUREN Def 1
* 1 BDISEN Def 1
* 2 ZUEN Def 1
* 3 LPIOPD DEf 1 0
* 4 LPDLLPD DEf 1 0
* 7:5 DQSGX DQS Extention 000
* 10:8 DQSGE DQS Early Gate
* 11 NOBUB No Bubbles, adds latency 1
* 12 FXDLAT Fixed Read Latency 0
* 15:13 Reserved
* 19:16 CKEPDD CKE Power Down 0000
* 23:20 ODTPDD ODT Power Down 0000
* 24 NL2PD Power Down Non LPDDR2 pins 0
* 25 NL2OE Output Enable Non LPDDR2 pins 1
* 26 TPDPD LPDDR Only 0
* 27 TPDOE LPDDR Only 0
* 28 CKOE Output Enable Clk's 1
* 29 ODTOE Output Enable ODT 1
* 30 RSTOE RST# Output Enable 1
* 31 CKEOE CKE Output Enable 1
*/
write32(DDR_PHY + DDRPHY_DSGCR_OFFSET, 0xF2000807);
/* DTPR0 : DRAM Timing Params 0
* 1:0 tMRD 2
* 4:2 tRTP 3
* 7:5 tWTR 3
* 11:8 tRP 6
* 15:12 tRCD 6
* 20:16 tRAS 18
* 24:21 tRRD 4
* 30:25 tRC 24 (23)
* 31 tCCD 0 BL/2 Cas to Cas
*/
write32(DDR_PHY + DDRPHY_DTPR0_OFFSET, 0x3092666E);
/* DTPR1 : DRAM Timing Params 1
* 1:0 ODT On/Off Del Std 0
* 2 tRTW Rd2Wr Del 0 std 1 +1 0
* 8:3 tFAW 4 Bank Act 45ns = 18 18
* 10:9 tMOD DDR3 Only 0
* 11 tRTODT DDR3 Only 0
* 15:12 Reserved
* 23:16 tRFC 195ns 78 def 131 78d
* 26:24 tDQSCK LPDDR2 only 1
* 29:27 tDQSCKmax 1
* 31:30 Reserved
*/
write32(DDR_PHY + DDRPHY_DTPR1_OFFSET, 0x094E0092);
/* DTPR2 : DRAM Timing Params 2
* 9:0 tXS exit SR def 200, 200d
* 14:10 tXP PD Exit Del 8 3
* 18:15 tCKE CKE Min pulse 3
* 28:19 tDLLK DLL Lock time 200d
* 32:29 Reserved
*/
write32(DDR_PHY + DDRPHY_DTPR2_OFFSET, 0x06418CC8);
/* PTR0 : PHY Timing Params 0
* 5:0 tDLLRST Def 27
* 17:6 tDLLLOCK Def 2750
* 21:18 tITMSRST Def 8
* 31:22 Reserved 0
*/
write32(DDR_PHY + DDRPHY_PTR0_OFFSET, 0x0022AF9B);
/* PTR1 : PHY Timing Params 1
* 18:0 : tDINITO DRAM Init time 200us 80,000 Dec 0x13880
* 29:19 : tDINIT1 DRAM Init time 400ns 160 Dec 0xA0
*/
write32(DDR_PHY + DDRPHY_PTR1_OFFSET, 0x05013880);
/* DQS gating configuration: passive windowing mode */
/*
* PGCR: PHY General cofiguration register
* 0 ITM DDR mode: 0
* 1 DQS gading configuration: passive windowing 1
* 2 DQS drift compensation: not supported in passive windowing 0
* 4:3 DQS drift limit 0
* 8:5 Digital test output select 0
* 11:9 CK Enable: one bit for each 3 CK pair: 0x7
* 13:12 CK Disable values: 0x2
* 14 CK Invert 0
* 15 IO loopback 0
* 17:16 I/O DDR mode 0
* 21:18 Ranks enable by training: 0xF
* 23:22 Impedance clock divider select 0x2
* 24 Power down disable 1
* 28:25 Refresh during training 0
* 29 loopback DQS shift 0
* 30 loopback DQS gating 0
* 31 loopback mode 0
*/
write32(DDR_PHY + DDRPHY_PGCR_OFFSET, 0x01BC2E02);
/* PGSR : Wait for INIT/DLL/Z Done from Power on Reset */
if (wait_for_completion(DDR_PHY + DDRPHY_PGSR_OFFSET, 0x00000007))
return DDR_TIMEOUT;
/* PIR : use PHY for DRAM Init */
write32(DDR_PHY + DDRPHY_PIR_OFFSET, 0x000001DF);
/* PGSR : Wait for DRAM Init Done */
if (wait_for_completion(DDR_PHY + DDRPHY_PGSR_OFFSET, 0x0000001F))
return DDR_TIMEOUT;
/* DF1STAT0 : wait for DFI_INIT_COMPLETE */
if (wait_for_completion(DDR_PCTL + DDR_PCTL_DFISTAT0_OFFSET,
0x00000001))
return DDR_TIMEOUT;
/* POWCTL : Start the memory Power Up seq*/
write32(DDR_PCTL + DDR_PCTL_POWCTL_OFFSET, 0x00000001);
/* POWSTAT : wait for POWER_UP_DONE */
if (wait_for_completion(DDR_PCTL + DDR_PCTL_POWSTAT_OFFSET,
0x00000001))
return DDR_TIMEOUT;
/*
* TREFI : t_refi Timing Register 1X
* 12:0 t_refi 7.8us in 100ns 0x4E
* 15:13 Reserved 0
* 18:16 num_add_ref 0
* 30:19 Reserved 0
* 31 Update 1
*/
write32(DDR_PCTL + DDR_PCTL_TREFI_OFFSET, 0x8000004E);
/* TMRD : t_mrd Timing Register -- Range 2 to 3 */
write32(DDR_PCTL + DDR_PCTL_TMRD_OFFSET, 0x00000002);
/*
* TRFC : t_rfc Timing Register -- Range 15 to 131
* 195ns / 2.5ns 78 x4E
*/
write32(DDR_PCTL + DDR_PCTL_TRFC_OFFSET, 0x0000004E);
/* TRP : t_rp Timing Register -- Range 3 to 7
* 4:0 tRP 12.5 / 2.5 = 5 6 For Now 6-6-6
* 17:16 rpea_extra tRPall 8 bank 1
*/
write32(DDR_PCTL + DDR_PCTL_TRP_OFFSET, 0x00010006);
/* TAL : Additive Latency Register -- AL in MR1 */
write32(DDR_PCTL + DDR_PCTL_TAL_OFFSET, 0x00000000);
/* DFITPHYWRLAT : Write cmd to dfi_wrdata_en */
write32(DDR_PCTL + DDR_PCTL_DFIWRLAT_OFFSET, 0x00000002);
/* DFITRDDATAEN : Read cmd to dfi_rddata_en */
write32(DDR_PCTL + DDR_PCTL_DFITRDDATAEN_OFFSET, 0x00000002);
/* TCL : CAS Latency Timing Register -- CASL in MR0 6-6-6 */
write32(DDR_PCTL + DDR_PCTL_TCL_OFFSET, 0x00000006);
/* TCWL : CAS Write Latency Register --CASL-1 */
write32(DDR_PCTL + DDR_PCTL_TCWL_OFFSET, 0x00000005);
/*
* TRAS : Activate to Precharge cmd time
* Range 8 to 24: 45ns / 2.5ns = 18d
*/
write32(DDR_PCTL + DDR_PCTL_TRAS_OFFSET, 0x00000012);
/*
* TRC : Min. ROW cylce time
* Range 11 to 31: 57.5ns / 2.5ns = 23d Playing safe 24
*/
write32(DDR_PCTL + DDR_PCTL_TRC_OFFSET, 0x00000018);
/*
* TRCD : Row to Column Delay
* Range 3 to 7 (TCL = TRCD): 2.5ns / 2.5ns = 5 but running 6-6-6 6
*/
write32(DDR_PCTL + DDR_PCTL_TRCD_OFFSET, 0x00000006);
/* TRRD : Row to Row delay -- Range 2 to 6: 2K Page 10ns / 2.5ns = 4*/
write32(DDR_PCTL + DDR_PCTL_TRRD_OFFSET, 0x00000004);
/* TRTP : Read to Precharge time -- Range 2 to 4: 7.3ns / 2.5ns = 3 */
write32(DDR_PCTL + DDR_PCTL_TRTP_OFFSET, 0x00000003);
/* TWR : Write recovery time -- WR in MR0: 15ns / 2.5ns = 6
*/
write32(DDR_PCTL + DDR_PCTL_TWR_OFFSET, 0x00000006);
/*
* TWTR : Write to read turn around time
* Range 2 to 4: 7.3ns / 2.5ns = 3
*/
write32(DDR_PCTL + DDR_PCTL_TWTR_OFFSET, 0x00000003);
/* TEXSR : Exit Self Refresh to first valid cmd: tXS 200*/
write32(DDR_PCTL + DDR_PCTL_TEXSR_OFFSET, 0x000000C8);
/*
* TXP : Exit Power Down to first valid cmd
* tXP 2, Settingto 3 to match PHY
*/
write32(DDR_PCTL + DDR_PCTL_TXP_OFFSET, 0x00000003);
/*
* TDQS : t_dqs Timing Register
* DQS additional turn around Rank 2 Rank (1 Rank) Def 1
*/
write32(DDR_PCTL + DDR_PCTL_TDQS_OFFSET, 0x00000001);
/*TRTW : Read to Write turn around time Def 2
* Actual gap t_bl + t_rtw
*/
write32(DDR_PCTL + DDR_PCTL_TRTW_OFFSET, 0x00000002);
/* TCKE : CKE min pulse width DEf 3 */
write32(DDR_PCTL + DDR_PCTL_TCKE_OFFSET, 0x00000003);
/*
* TXPDLL : Slow Exit Power Down to first valid cmd delay
* tXARDS 10+AL = 10
*/
write32(DDR_PCTL + DDR_PCTL_TXPDLL_OFFSET, 0x0000000A);
/*
* TCKESR : Min CKE Low width for Self refresh entry to exit
* t_ckesr = 0 DDR2
*/
write32(DDR_PCTL + DDR_PCTL_TCKESR_OFFSET, 0x00000000);
/* SCFG : State Configuration Register (Enabling Self Refresh)
* 0 LP_en Leave Off for Bring Up 0
* 5:1 Reserved
* 6 Synopsys Internal Only 0
* 7 Enale PHY indication of LP Opportunity 1
* 11:8 bbflags_timing max UPCTL_TCU_SED_P - tRP (16 - 6) Use 4
* 16:12 Additional delay on accertion of ac_pdd 4
* 31:17 Reserved
*/
write32(DDR_PCTL + DDR_PCTL_SCFG_OFFSET, 0x00004480);
/*
* DFITPHYWRDATA : dfi_wrdata_en to drive wr data
* DFI Clks wrdata_en to wrdata Def 1
*/
write32(DDR_PCTL + DDR_PCTL_DFITPHYWRDATA_OFFSET, 0x00000000);
/*
* DFITPHYRDLAT : dfi_rddata_en to dfi_rddata_valid
* DFI clks max rddata_en to rddata_valid Def 15
*/
write32(DDR_PCTL + DDR_PCTL_DFITPHYRDLAT_OFFSET, 0x00000008);
/* MCMD : PREA, Addr 0 Bank 0 Rank 0 Del 0
* 3:0 cmd_opcode PREA 00001
* 16:4 cmd_addr 0
* 19:17 bank_addr 0
* 23:20 rank_sel 0 0001
* 27:24 cmddelay 0
* 30:24 Reserved
*/
write32(DDR_PCTL + DDR_PCTL_MCMD_OFFSET, 0x80100001);
/* MRS cmd wait for completion */
if (wait_for_completion(DDR_PCTL + DDR_PCTL_MCMD_OFFSET, 0x00100001))
return DDR_TIMEOUT;
/* SCTL : UPCTL switch INIT CONFIG State */
write32(DDR_PCTL + DDR_PCTL_SCTL_OFFSET, 0x00000001);
/* STAT : Wait for Switch INIT to Config State */
if (wait_for_completion(DDR_PCTL + DDR_PCTL_STAT_OFFSET, 0x00000001))
return DDR_TIMEOUT;
/* DFISTCFG0 : Drive various DFI signals appropriately
* 0 dfi_init_start 0
* 1 dfi_freq_ratio_en 1
* 2 dfi_data_byte_disable_en 1
*/
write32(DDR_PCTL + DDR_PCTL_DFISTCFG0_OFFSET, 0x00000003);
/* DFISTCFG1 : Enable various DFI support
* 0 dfi_dram_clk_disable_en 1
* 1 dfi_dram_clk_disable_en_pdp only lPDDR 0
*/
write32(DDR_PCTL + DDR_PCTL_DFISTCFG1_OFFSET, 0x00000001);
/* DFISTCFG2 : Enable Parity and asoc interrupt
* 0 dfi_parity_in Enable 1
* 1 Interrupt on dfi_parity_error 1
*/
write32(DDR_PCTL + DDR_PCTL_DFISTCFG2_OFFSET, 0x00000003);
/* DFILPCFG0 : DFI Low Power Interface Configuration
* 0 Enable DFI LP IF during PD 1
* 3:1 Reserved
* 7:4 DFI tlp_wakeup time 0
* 8 Enable DFI LP IF during SR 1
* 11:9 Reserved
* 15:12 dfi_lp_wakeup in SR 0
* 19:16 tlp_resp DFI 2.1 recomend 7
* 23:20 Reserved
* 24 Enable DFI LP in Deep Power Down 0
* 27:25 Reserved
* 31:28 DFI LP Deep Power Down Value 0
*/
write32(DDR_PCTL + DDR_PCTL_DFILPCFG0_OFFSET, 0x00070101);
/* DFIODTCFG : DFI ODT Configuration
* Only Enabled on Rank0 Writes
* 0 rank0_odt_read_nsel 0
* 1 rank0_odt_read_sel 0
* 2 rank0_odt_write_nsel 0
* 3 rank0_odt_write_sel 1
*/
write32(DDR_PCTL + DDR_PCTL_DFIODTCFG_OFFSET, 0x00000008);
/* DFIODTCFG1 : DFI ODT Configuration
* 4:0 odt_lat_w 4
* 12:8 odt_lat_r 0 Def
* 4:0 odt_len_bl8_w 6 Def
* 12:8 odt_len_bl8_r 6 Def
*/
write32(DDR_PCTL + DDR_PCTL_DFIODTCFG1_OFFSET, 0x06060004);
/* DCFG : DRAM Density 256 Mb 16 Bit IO Width
* 1:0 Devicw Width 1 x8, 2 x16, 3 x32 2
* 5:2 Density 2Gb = 5
* 6 Dram Type (MDDR/LPDDR2) Only 0
* 7 Reserved 0
* 10:8 Address Map R/B/C = 1
* 31:11 Reserved
*/
write32(DDR_PCTL + DDR_PCTL_DCFG_OFFSET, 0x00000116);
/* PCFG_0 : Port 0 AXI config */
if (BL8)
write32(DDR_PCTL + DDR_PCTL_PCFG0_OFFSET, 0x000800A0);
else
write32(DDR_PCTL + DDR_PCTL_PCFG0_OFFSET, 0x000400A0);
/* SCTL : UPCTL switch Config to ACCESS State */
write32(DDR_PCTL + DDR_PCTL_SCTL_OFFSET, 0x00000002);
/* STAT : Wait for switch CFG -> GO State */
if (wait_for_completion(DDR_PCTL + DDR_PCTL_STAT_OFFSET, 0x3))
return DDR_TIMEOUT;
return 0;
}
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