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sb/intel/common/spi: Increase flash erase timeout 

This patch provides an increased timeout (60ms -> 1s) for SPI
HW-sequencing flash erase operations. Without that the erase for MRC
cache writing on siemens/mc_bdx1 sometimes goes wrong because the
timeout stops waiting for flash cycle completion. It was found
during continuous integration. Investigation showed that the used flash
type takes sporadic (e.g. 5% of the test cycles) more time for completion
of erasing operation if the ambient temperature increases. The measured
time values are in range of data sheet of SPI flash. 60ms is a typical
value. So increasing the value is necessary.

tested on siemens/bdx1; measured time values with increased ambient
temperature of flash were always smaller than worst case value of 1s.

Change-Id: Id50636f9ed834ffd7810946798b300e58b2c14d2
Signed-off-by: Uwe Poeche <uwe.poeche@siemens.com>
Reviewed-on: https://review.coreboot.org/c/coreboot/+/34173
Tested-by: build bot (Jenkins) <no-reply@coreboot.org>
Reviewed-by: Werner Zeh <werner.zeh@siemens.com>
This commit is contained in:
Uwe Poeche 2019-07-09 14:32:43 +02:00 committed by Martin Roth
parent 7724cebf97
commit 868c8074b5
1 changed files with 1 additions and 2 deletions
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3
src/southbridge/intel/common/spi.c
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@ -28,7 +28,6 @@
#include <device/device.h>
#include <device/pci.h>
#include <spi_flash.h>
#include <spi-generic.h>
#include "spi.h"
@ -727,7 +726,7 @@ static int ich_hwseq_erase(const struct spi_flash *flash, u32 offset,
u32 start, end, erase_size;
int ret;
uint16_t hsfc;
uint16_t timeout = 1000 * 60;
unsigned int timeout = 1000 * SPI_FLASH_SECTOR_ERASE_TIMEOUT;
erase_size = flash->sector_size;
if (offset % erase_size || len % erase_size) {